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    • To support selective customers to explore more potential of RF power device from the reference plane of bare die or develop highly compact chip on carrier concept or multi-chip-module which is limited by traditional packaged device, Innogration offers a broad range of RF Power bare discrete die including GaN HEMT or LDMOS, with high quality proven by Innogration's many packaged transistor for years.

    Please be informed that we require end user statement for all bare die related activities for business judgement.

    Typical power of single die

    • 12V LDMOS: 1-30W

    • 28V LDMOS: 1-180W

    • 50V LDMOS: 2-300W

    • 28V RF GaN: 1-180W,

    • 50V RF GaN: 10-450W 

    • Chip capacitor: 2-200pF

    Please check with us for their upper limitation of  of frequency, or other details

    Testing,Packing and assembly

    •  Complete test and visual check before shipment

    •  All bare die is packed then shipped in Gel-Pak container

    • Vacuum collect is the preferred method of pick-up

    • Die attach method: Silver sintering or Au-Sn soldering

    • Wire bonding method: Al or Au wire

    Application

    • Broadband amplifier

    • Radio link amplifier

    • TRX component

    • Chip on carrier RF subsystem   

    • Test and measurement     


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