Suzhou,August 1st,2024 – Innogration Technologies,a fabless semiconductor company headquartered in Suzhou,China,specializing in the design and manufacturing of RF power semiconductor devices,modules,and sub-system assemblies,announced new record of its 50V push pull LDMOS to support more than 2500W, target for HF to VHF band ISM and FM, communication applications.

“By leveraging our leading power density of our 50V IDEV rugged LDMOS technology together with our patent die layout within package and package innovation, after 2000W level reached in 2020, now by MF012K5VPX as push pull configuration, we are now reaching more than 2500W as new record for solid state RF Power device, make them especially suitable for any HF and VHF application, for example FM radio, plasma generators, laser exciter and MRI machine etc. Certainly, with so high power capability, customer can also use it at lower voltage to gain more ruggedness  margin and enable high efficiency Class E amplifier as well(see below demonstrator). It is clearly different to what our competition is doing, only by increasing the power supply to 65V and 75V to reach higher power in the expense of more difficulty related to thermal management and power supply ”,remarked by YingHao Zhuo, Head of Product marketing, Innogration Technologies.

Demonstration of MF012K5VPX as 13.56MHz RF Generator, to deliver 1300W CW with 84% efficiency in form of Class E at Vds=36V, with enough ruggedness margin