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Innogration delivers 1500 and 2000W 50V LDMOS as new record for RF Power

Suzhou,June 12th,2020 – Innogration Technologies,a fabless semiconductor company headquartered in Suzhou,China,specializing in the design and manufacturing of RF power semiconductor devices,modules,and sub-system assemblies,announced the general sampling of 50V LDMOS up to 2000W, target for HF to VHF band ISM and FM, communication applications.


RF LDMOS remains dominant even unbeatable technology for lower radio bands like below HF to VHF application.“By leveraging our leading power density of our 50V IDEV rugged LDMOS technology together with our patent die layout within package, we are sampling the most powerful solid state RF Power transistor in the world over all competition, make them especially suitable for any HF and VHF application, for example FM radio, plasma generators, laser exciter and MRI machine etc.  ” ,remarked by YingHao Zhuo, Head of Product marketing, Innogration Technologies.


Housed on D4E package, 2 key CW devices have been developed with availability now

  • MQ051K5VPX: >1500W for both CW and pulse application up to 225MHz
  • MQ052K0VPX: >2000W for both CW and pulse application up to 225MHz

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